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Dual-Phase, Quick-PWM Controller
for IMVP6+ CPU Core Power Supplies
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, V IN = 10V, V CC = V DD = V SHDN = V PGDIN = V PSI = V ILIM = 5V, V V3P3 = 3.3V, V DPRSLPVR = V DPRSTP = V GNDS =
V PGND_ = 0, CSPAVG = CSP_ = CSN_ = OUTS = 1.0000V, R FB = 3.57k Ω from FB to VPS, [D6–D0] = [0101000]; T A = -40°C to
+105°C , unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
GATE DRIVERS
DH_ Gate-Driver On-Resistance
DL_ Gate-Driver On-Resistance
Internal BST_ Switch
On-Resistance
R ON(DH_)
R ON(DL_)
R ON(BST_)
BST_ - LX_ forced
to 5V
High state (pullup)
Low state (pulldown)
I BST_ = 10mA
High state (pullup)
Low state (pulldown)
2.5
2.0
2.0
0.7
20
LOGIC AND I/O
Logic Input High Voltage
Logic Input Low Voltage
Low-Voltage Logic Input
High Voltage
Low-Voltage Logic Input
Low Voltage
V IH
V IL
V IHLV
V ILLV
SHDN , PGDIN, DPRSLPVR
SHDN , PGDIN, DPRSLPVR
PSI , D0 –D6, DPRSTP
PSI , D0 –D6, DPRSTP
2.3
0.67
1.0
0.33
V
V
V
V
Note 2: DC output accuracy specifications refer to the trip level of the error amplifier. The output voltage has a DC regulation higher
than the trip level by 50% of the output ripple. When pulse skipping, the output rises by approximately 1.5% when transition-
ing from continuous conduction to no load.
Note 3: On-time and minimum off-time specifications are measured from 50% to 50% at the DL_ and DH_ pins, with LX_ forced to
GND, BST_ forced to 5V, and a 500pF capacitor from DH_ to LX_ to simulate external MOSFET gate capacitance. Actual in-
circuit times might be different due to MOSFET switching speeds.s
10
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制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述: